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datasheet pleasereadtheimportantnoticeandwarningsattheendofthisdocument v2.3 www.infineon.com 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt lowswitchinglossesigbtinhighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelemittercontrolleddiode features: highspeedh3technologyoffers: ?highefficiencyinhardswitchingandresonanttopologies ?10secshortcircuitwithstandtimeatt vj =175c ?easyparallelingcapabilityduetopositivetemperature coefficientinv cesat ?lowemi ?lowgatechargeq g ?verysoft,fastrecoveryfullcurrentanti-paralleldiode ?maximumjunctiontemperaturet vjmax =175c ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?industrialups ?charger ?energystorage ?three-levelsolarstringinverter ?welding productvalidation: qualifiedforindustrialapplicationsaccordingtotherelevanttests ofjedec47/20/22 keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKQ50N120CH3 1200v 50a 2v 175c k50mch3 pg-to247-3-46 g c e
datasheet 2 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e
datasheet 3 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 1200 v dccollectorcurrent,limitedby t vjmax t c =25c t c =135c i c 100.0 50.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 200.0 a turn off safe operating area v ce 1200v, t vj 175c, t p =1s - 200.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 100.0 50.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 200.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s, d <0.010) v ge 20 30 v short circuit withstand time v ge =15.0v, v cc 600v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =175c t sc 10 s powerdissipation t c =25c powerdissipation t c =135c p tot 652.0 173.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c thermalresistance value min. typ. max. parameter symbol conditions unit r th characteristics igbt thermal resistance, 1) junction - case r th(j-c) - - 0.23 k/w diode thermal resistance, 1) junction - case r th(j-c) - - 0.42 k/w thermal resistance junction - ambient r th(j-a) - - 40 k/w 1) thermal resistance of thermal grease r th(c-s) (case to heat sink) of more than 0.1k/w not included. g c e
datasheet 4 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 1200 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =50.0a t vj =25c t vj =175c - - 2.00 2.50 2.35 - v diode forward voltage v f v ge =0v, i f =50.0a t vj =25c t vj =175c - - 1.90 1.85 2.30 - v gate-emitter threshold voltage v ge(th) i c =1.25ma, v ce = v ge 5.1 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v, v ge =0v t vj =25c t vj =175c - - - 4000 350 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =50.0a - 17.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 3269 - output capacitance c oes - 355 - reverse transfer capacitance c res - 199 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =960v, i c =40.0a, v ge =15v - 235.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 34 - ns rise time t r - 32 - ns turn-off delay time t d(off) - 297 - ns fall time t f - 30 - ns turn-on energy e on - 3.00 - mj turn-off energy e off - 1.90 - mj total switching energy e ts - 4.90 - mj t vj =25c, v cc =600v, i c =50.0a, v ge =0.0/15.0v, r g(on) =10.0 w , r g(off) =10.0 w , l s =90nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e
datasheet 5 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 240 - ns diode reverse recovery charge q rr - 3.50 - c diode peak reverse recovery current i rrm - 34.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -403 - a/s t vj =25c, v r =600v, i f =50.0a, di f /dt =1200a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 32 - ns rise time t r - 36 - ns turn-off delay time t d(off) - 400 - ns fall time t f - 66 - ns turn-on energy e on - 5.30 - mj turn-off energy e off - 4.10 - mj total switching energy e ts - 9.40 - mj t vj =175c, v cc =600v, i c =50.0a, v ge =0.0/15.0v, r g(on) =10.0 w , r g(off) =10.0 w , l s =90nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =175c diode reverse recovery time t rr - 390 - ns diode reverse recovery charge q rr - 8.60 - c diode peak reverse recovery current i rrm - 46.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -210 - a/s t vj =175c, v r =600v, i f =50.0a, di f /dt =1200a/s g c e
datasheet 6 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 0 25 50 75 100 125 150 175 200 v ge =20v 17v 15v 13v 11v 9v 7v 5v g c e
datasheet 7 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 5. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 0 25 50 75 100 125 150 175 200 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 175 200 t vj = 25c t vj = 175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i c = 25a i c = 50a i c = 100a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, r g =10 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 20 40 60 80 100 1 10 100 1000 t d(off) t f t d(on) t r g c e
datasheet 8 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 9. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 0 5 10 15 20 25 30 35 40 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =600v, v ge =0/15v, i c =50a, r g =10 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =1,25ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 1 2 3 4 5 6 7 8 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, r g =10 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 20 40 60 80 100 0 5 10 15 20 25 30 e off e on e ts g c e
datasheet 9 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 13. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =600v, v ge =0/15v, i c =50a, r g =10 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0 2 4 6 8 10 12 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =175c, v ge =0/15v, i c =50a, r g =10 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 400 450 500 550 600 650 700 750 800 0 2 4 6 8 10 12 14 e off e on e ts figure 16. typicalgatecharge ( i c =50a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 v cc =240v v cc =960v g c e
datasheet 10 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res figure 18. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 600v, t vj 175c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 10 11 12 13 14 15 16 17 18 0 50 100 150 200 250 300 350 400 450 figure 19. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 600v,startat t vj 175c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 45 figure 20. igbttransientthermalresistance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 1e-4 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.027716 3.9e-4 2 0.073554 2.7e-3 3 0.124423 0.018807 4 2.6e-3 0.524934 5 3.2e-4 12.39161 g c e
datasheet 11 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 21. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1e-4 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.05893 3.8e-4 2 0.16211 2.7e-3 3 0.18928 0.01654 4 5.4e-3 0.37453 5 3.7e-4 11.69172 figure 22. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 700 800 900 t vj = 25c, i f = 50a t vj = 175c, i f = 50a figure 23. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 400 600 800 1000 1200 1400 0 2 4 6 8 10 12 t vj = 25c, i f = 50a t vj = 175c, i f = 50a figure 24. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 400 600 800 1000 1200 1400 0 10 20 30 40 50 60 t vj = 25c, i f = 50a t vj = 175c, i f = 50a g c e
datasheet 12 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 25. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 400 600 800 1000 1200 1400 -800 -700 -600 -500 -400 -300 -200 -100 0 t vj = 25c, i f = 50a t vj = 175c, i f = 50a figure 26. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150 175 200 t vj = 25c t vj = 175c figure 27. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i f = 25a i f = 50a i f = 100a g c e
datasheet 13 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt g c e millimeters 5.44 (bsc) c e3 d e d1 d2 l1 e l n e1 b1 a a1 b a2 b2 dim 0.59 1.35 - 20.90 16.2515.70 1.05 19.80 13.10 3 min 4.90 2.31 1.16 1.901.96 0.053 0.8230.640 0.618 0.023 0.193 0.091 0.046 0.075 0.041 0.0770.780 0.516 0.66 16.85 1.55 13.50 21.10 15.90 20.10 1.35 4.30 5.10 2.51 1.26 2.10 max 2.06 0.026 3 0.663 0.5310.061 0.831 0.626 0.053 0.791 0.169 inches min max 0.201 0.099 0.050 0.083 0.081 european projection issue date 0 scale 7.5mm 5 5 0 revision 13-08-2014 01 document no. z8b00174295 0.214 (bsc) - 1.96 0.077 2.25 0.089 d3 0.58 0.023 0.78 0.031 r 1.90 0.075 2.10 0.083 package drawing pg-to247-3-46
datasheet 14 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt g c e millimeters 5.44 (bsc) c e3 d e d1 d2 l1 e l n e1 b1 a a1 b a2 b2 dim 0.59 1.35 - 20.90 16.2515.70 1.05 19.80 13.10 3 min 4.90 2.31 1.16 1.901.96 0.053 0.8230.640 0.618 0.023 0.193 0.091 0.046 0.075 0.041 0.0770.780 0.516 0.66 16.85 1.55 13.50 21.10 15.90 20.10 1.35 4.30 5.10 2.51 1.26 2.10 max 2.06 0.026 3 0.663 0.5310.061 0.831 0.626 0.053 0.791 0.169 inches min max 0.201 0.099 0.050 0.083 0.081 european projection issue date 0 scale 7.5mm 5 5 0 revision 13-08-2014 01 document no. z8b00174295 0.214 (bsc) - 1.96 0.077 2.25 0.089 d3 0.58 0.023 0.78 0.031 r 1.90 0.075 2.10 0.083 package drawing pg-to247-3-46 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
datasheet 15 v2.3 2017-06-09 IKQ50N120CH3 highspeedswitchingseriesthirdgenerationigbt revisionhistory IKQ50N120CH3 revision:2017-06-09,rev.2.3 previous revision revision date subjects (major changes since last revision) 2.1 2017-04-26 final data sheet 2.2 2017-05-10 minor change conditions diode characteristic 2.3 2017-06-09 update figure 26 g c e millimeters 5.44 (bsc) c e3 d e d1 d2 l1 e l n e1 b1 a a1 b a2 b2 dim 0.59 1.35 - 20.90 16.2515.70 1.05 19.80 13.10 3 min 4.90 2.31 1.16 1.901.96 0.053 0.8230.640 0.618 0.023 0.193 0.091 0.046 0.075 0.041 0.0770.780 0.516 0.66 16.85 1.55 13.50 21.10 15.90 20.10 1.35 4.30 5.10 2.51 1.26 2.10 max 2.06 0.026 3 0.663 0.5310.061 0.831 0.626 0.053 0.791 0.169 inches min max 0.201 0.099 0.050 0.083 0.081 european projection issue date 0 scale 7.5mm 5 5 0 revision 13-08-2014 01 document no. z8b00174295 0.214 (bsc) - 1.96 0.077 2.25 0.089 d3 0.58 0.023 0.78 0.031 r 1.90 0.075 2.10 0.083 package drawing pg-to247-3-46 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
trademarksofinfineontechnologiesag hvic?,ipm?,pfc?,au-convertir?,aurix?,c166?,canpak?,cipos?,cipurse?,cooldp?, coolgan?,coolir?,coolmos?,coolset?,coolsic?,dave?,di-pol?,directfet?,drblade?,easypim?, econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,ganpowir?, hexfet?,hitfet?,hybridpack?,imotion?,iram?,isoface?,isopack?,ledrivir?,litix?,mipaq?, modstack?,my-d?,novalithic?,optiga?,optimos?,origa?,powiraudio?,powirstage?,primepack?, primestack?,profet?,pro-sil?,rasic?,real3?,smartlewis?,solidflash?,spoc?, strongirfet?,supirbuck?,tempfet?,trenchstop?,tricore?,uhvic?,xhp?,xmc? trademarksupdatednovember2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. publishedby infineontechnologiesag 81726mnchen,germany ?infineontechnologiesag2017. allrightsreserved. importantnotice theinformationgiveninthisdocumentshallin noevent beregardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie).withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,infineontechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof theproductofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityof customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest infineontechnologiesoffice(www.infineon.com). pleasenotethatthisproductis not qualifiedaccordingtotheaecq100oraecq101documentsoftheautomotive electronicscouncil. warnings duetotechnicalrequirementsproductsmaycontaindangeroussubstances.forinformationonthetypesinquestion pleasecontactyournearestinfineontechnologiesoffice. exceptasotherwiseexplicitlyapprovedbyinfineontechnologiesinawrittendocumentsignedbyauthorized representativesofinfineontechnologies,infineontechnologiesproductsmay not beusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. g c e millimeters 5.44 (bsc) c e3 d e d1 d2 l1 e l n e1 b1 a a1 b a2 b2 dim 0.59 1.35 - 20.90 16.2515.70 1.05 19.80 13.10 3 min 4.90 2.31 1.16 1.901.96 0.053 0.8230.640 0.618 0.023 0.193 0.091 0.046 0.075 0.041 0.0770.780 0.516 0.66 16.85 1.55 13.50 21.10 15.90 20.10 1.35 4.30 5.10 2.51 1.26 2.10 max 2.06 0.026 3 0.663 0.5310.061 0.831 0.626 0.053 0.791 0.169 inches min max 0.201 0.099 0.050 0.083 0.081 european projection issue date 0 scale 7.5mm 5 5 0 revision 13-08-2014 01 document no. z8b00174295 0.214 (bsc) - 1.96 0.077 2.25 0.089 d3 0.58 0.023 0.78 0.031 r 1.90 0.075 2.10 0.083 package drawing pg-to247-3-46 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions

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